BUL50A

LAB MECHANICAL DATA Dimensions in mm (inches) 4.69 5.31 1.49 2.49 (0.185) (0.209) (0.059) (0.098) 6.15 (0.242) BSC 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 3.55 (0.140) 3.81 (0.150) SEME BUL50A ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE FAST SWITCHING HIGH ENERGY RATING EFFICIENT POWER SWITCHING MILITARY AND HI–REL VERSIONS AVAILABLE IN METAL AND CERAMIC SURFACE MOUNT PACKAGES 4.50 (0.177) M ax. 1 2 3 1.65 (0.065) 2.13 (0.084) 2.87 (0.113) 3.12 (0.123) 0.40 (0.016) 0.79 (0.031) 19.81 (0.780) 20.32 (0.800) 1.01 (0.040) 1.40 (0.055) 2.21 (0.087) 2.59 (0.102) 5.25 (0.215) BSC TO–247 Pin 1 – Base Pad 2 – Collector 15.2 max 14 2.0 4.6 max Pad 3 – Emitter 4.4 FEATURES 21.0 max 12.7 max 4.25 Dia. 4.15 1 2 3 Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. Ion implant and high accuracy masking for tight control of characteristics from batch to batch. Triple Guard Rings for improved control of high voltages. 13.6 min 5.5 11 1.15 0.95 0.4 1.6 SOT93 Pin 1 – Base Pad 2 – Collector Pad 3 – Emitter ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC IC(PK) IB Ptot Tstg Semelab plc. Collector – Base Voltage Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IC = 0) Continuous Collector Current Peak ...