BUL54ASMD

BUL54ASMD MECHANICAL DATA Dimensions in mm 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 3 .6 0 (0 .1 4 2 ) M a x . 1 3 2 SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE FAST SWITCHING (tf = 40ns) EXCEPTIONAL HIGH TEMPERATURE PERFORMANCE HIGH ENERGY RATING EFFICIENT POWER SWITCHING MILITARY AND HI–REL OPTIONS 0 .7 6 (0 .0 3 0 ) m in . 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 1 ) 9 ) 6 ) 4 ) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 ) FEATURES Multi–base design for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. Ion implant and high accuracy masking for tight control of characteristics from batch to batch. Triple Guard Rings for improved control of high voltages. SMD1 Package Pad 1 – Base Pad 2 – Collector Pad 3 – Emitter ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC IC(PK) IB Ptot Tstg Rth Semelab plc. Collector – Base Voltage Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage Collector Current Peak Collector Current Base Current Total Dissipation at Tcase = 25°C Derate above 25°C when used on efficient heatsink Operating and ...