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BUL54B Datasheet

Part Number BUL54B
Manufacturers Seme LAB
Logo Seme LAB
Description NPN Transistor
Datasheet BUL54B DatasheetBUL54B Datasheet (PDF)

LAB MECHANICAL DATA Dimensions in mm 10.2 SEME BUL54B ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 3.6 Dia. 6.3 15.1 Designed for use in electronic ballast applications • • • • • SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE FAST SWITCHING HIGH ENERGY RATING MILITARY AND HI–REL VERSIONS AVAILABLE IN METAL AND CERAMIC SURFACE MOUNT PACKAGES 1 2 3 1.3 14.0 0.85 2.54 2.54 FEATURES • Multi–base for efficient energy distribution across the chip resu.

  BUL54B   BUL54B






Part Number BUL54BFI
Manufacturers Seme LAB
Logo Seme LAB
Description NPN Transistor
Datasheet BUL54B DatasheetBUL54BFI Datasheet (PDF)

LAB MECHANICAL DATA Dimensions in mm 10.2 SEME BUL54BFI ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 3.6 Dia. 6.3 15.1 Designed for use in electronic ballast applications • • • • • SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE FAST SWITCHING HIGH ENERGY RATING MILITARY AND HI–REL VERSIONS AVAILABLE IN METAL AND CERAMIC SURFACE MOUNT PACKAGES 1 2 3 1.3 14.0 0.85 2.54 2.54 FEATURES • Multi–base for efficient energy distribution across the chip re.

  BUL54B   BUL54B







Part Number BUL54ASMD
Manufacturers Seme LAB
Logo Seme LAB
Description NPN Transistor
Datasheet BUL54B DatasheetBUL54ASMD Datasheet (PDF)

BUL54ASMD MECHANICAL DATA Dimensions in mm 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 3 .6 0 (0 .1 4 2 ) M a x . 1 3 2 • SEMEFAB DESIGNED AND DIFFUSED DIE • HIGH VOLTAGE • FAST SWITCHING (tf = 40ns) • EXCEPTIONAL HIGH TEMPERATURE PERFORMANCE • HIGH ENERGY RATING • EFFICIENT POWER SWITCHING • MILITARY AND HI–R.

  BUL54B   BUL54B







Part Number BUL54AFI
Manufacturers Seme LAB
Logo Seme LAB
Description NPN Transistor
Datasheet BUL54B DatasheetBUL54AFI Datasheet (PDF)

LAB MECHANICAL DATA Dimensions in mm 10.2 SEME BUL54AFI ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 3.6 Dia. 6.3 15.1 Designed for use in electronic ballast applications • • • • • SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE FAST SWITCHING HIGH ENERGY RATING MILITARY AND HI–REL VERSIONS AVAILABLE IN METAL AND CERAMIC SURFACE MOUNT PACKAGES 1 2 3 1.3 14.0 0.85 2.54 2.54 FEATURES • Multi–base for efficient energy distribution across the chip re.

  BUL54B   BUL54B







Part Number BUL54A
Manufacturers Seme LAB
Logo Seme LAB
Description NPN Transistor
Datasheet BUL54B DatasheetBUL54A Datasheet (PDF)

LAB MECHANICAL DATA Dimensions in mm 10.2 1.3 4.5 SEME BUL54A ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications 6.3 3.6 Dia. 15.1 18.0 1 2 3 1.3 14.0 0.85 • • • • • 0.5 SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE FAST SWITCHING HIGH ENERGY RATING MILITARY AND HI–REL VERSIONS AVAILABLE IN METAL AND CERAMIC SURFACE MOUNT PACKAGES 2.54 2.54 FEATURES TO220 • Multi–base for efficient energy distrib.

  BUL54B   BUL54B







NPN Transistor

LAB MECHANICAL DATA Dimensions in mm 10.2 SEME BUL54B ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 3.6 Dia. 6.3 15.1 Designed for use in electronic ballast applications • • • • • SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE FAST SWITCHING HIGH ENERGY RATING MILITARY AND HI–REL VERSIONS AVAILABLE IN METAL AND CERAMIC SURFACE MOUNT PACKAGES 1 2 3 1.3 14.0 0.85 2.54 2.54 FEATURES • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. • Ion implant and high accuracy masking for tight control of characteristics from batch to batch. • Triple Guard Rings for improved control of high voltages. ISOLATED TO220 Pin 1 – Base Pin 2 – Collector Pin 3 – Emitter ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC IC(PK) IB Ptot Tstg Semelab plc. Collector – Base Voltage Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IC = 0) Continuous Collector Current Peak Collector Current Base Current Total Dissipation at Tcase = 25°C Operating and Storage Temperature Range Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. 800V 400V 10V 5A 8A 3A 70W –55 to +150°C Prelim. 3/95 LAB ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter VCEO(sus) V(BR)CBO V(BR)EBO ICBO ICEO IEBO SEME BUL54B Test Conditions Min. 400 800 10 Typ. Max. Unit ELECTRICAL CHARACTERISTICS Coll.


2005-03-23 : 2N2857CSM    2N2880    2N2891    2N2894    2N2894    2N2894    2N2894A    2N2894ACSM    2N2894CSM    2N2894DCSM   


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