LAB
MECHANICAL DATA Dimensions in mm
10.2
SEME
BUL54BFI
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN ...
LAB
MECHANICAL DATA Dimensions in mm
10.2
SEME
BUL54BFI
ADVANCED DISTRIBUTED BASE DESIGN HIGH
VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
3.6 Dia.
6.3
15.1
Designed for use in electronic ballast applications SEMEFAB DESIGNED AND DIFFUSED DIE HIGH
VOLTAGE FAST SWITCHING HIGH ENERGY RATING MILITARY AND HI–REL VERSIONS AVAILABLE IN METAL AND CERAMIC SURFACE MOUNT PACKAGES
1 2 3
1.3 14.0
0.85
2.54 2.54
FEATURES
Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. Ion implant and high accuracy masking for tight control of characteristics from batch to batch. Triple Guard Rings for improved control of high
voltages.
ISOLATED TO220
Pin 1 – Base Pin 2 – Collector Pin 3 – Emitter
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO VCEO VEBO IC IC(PK) IB Ptot Tstg Semelab plc. Collector – Base
Voltage Collector – Emitter
Voltage (IB = 0) Emitter – Base
Voltage (IC = 0) Continuous Collector Current Peak Collector Current Base Current Total Dissipation at Tcase = 25°C Operating and Storage Temperature Range
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
800V 400V 10V 5A 8A 3A 30W –55 to +150°C
Prelim. 3/95
LAB
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
VCEO(sus) V(BR)CBO V(BR)EBO ICBO ICEO IEBO
SEME
BUL54BFI
Test Conditions
Min.
400 800 10
Typ.
Max.
Unit
ELECTRICAL CHARACTERISTICS ...