LAB
MECHANICAL DATA Dimensions in mm
10.2 1.3 4.5
SEME
BUL55B
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEE...
LAB
MECHANICAL DATA Dimensions in mm
10.2 1.3 4.5
SEME
BUL55B
ADVANCED DISTRIBUTED BASE DESIGN HIGH
VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
Designed for use in electronic ballast applications
6.3
3.6 Dia.
15.1
18.0
1 2 3
1.3 14.0
0.85
0.5
SEMEFAB DESIGNED AND DIFFUSED DIE HIGH
VOLTAGE FAST SWITCHING HIGH ENERGY RATING
FEATURES
2.54 2.54
TO220
Pin 1 – Base Pin 2 – Collector Pin 3 – Emitter
Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. Ion implant and high accuracy masking for tight control of characteristics from batch to batch. Triple Guard Rings for improved control of high
voltages.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO VCEO VEBO IC IC(PK) IB Ptot Tstg Semelab plc. Collector – Base
Voltage(IE=0) Collector – Emitter
Voltage (IB = 0) Emitter – Base
Voltage (IC = 0) Continuous Collector Current Peak Collector Current Base Current Total Dissipation at Tcase = 25°C Operating and Storage Temperature Range
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
500V 250V 10V 8A 12A 3A 55W –55 to +150°C
Prelim. 2/97
LAB
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
VCEO(sus) V(BR)CBO V(BR)EBO ICBO ICEO IEBO
SEME
BUL55B
Test Conditions
Min.
250 500 10
Typ.
Max.
Unit
ELECTRICAL CHARACTERISTICS Collector – Emitter Sustaining
Voltage IC = 10mA Collector – Base Break...