BUL58BSMD
MECHANICAL DATA Dimensions in mm
0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 ....
BUL58BSMD
MECHANICAL DATA Dimensions in mm
0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 )
3 .6 0 (0 .1 4 2 ) M a x .
ADVANCED DISTRIBUTED BASE DESIGN HIGH
VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
SEMEFAB DESIGNED AND DIFFUSED HIGH
VOLTAGE FAST SWITCHING HIGH ENERGY RATING
1
3
0 .7 6 (0 .0 3 0 ) m in .
1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )
2
1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 )
FEATURES
9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 1 )
9 ) 6 ) 4 )
0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 )
Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
SMD1 PACKAGE
Pad 1 – Base Pad 2 – Collector Pad 3 – Emitter
Triple Guard Rings for improved control of high
voltages.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO VCEO VEBO IC IC(PK) IB Ptot Tstg Semelab plc. Collector – Base
Voltage Collector – Emitter
Voltage (IB = 0) Emitter – Base
Voltage (IC = 0) Collector Current Peak Collector Current Base Current Total Dissipation at Tcase = 25°C Derate above 25°C when used on efficient heatsink Operating and Storage Temperature Range
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