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BUL62A Datasheet

Part Number BUL62A
Manufacturers Seme LAB
Logo Seme LAB
Description NPN Transistor
Datasheet BUL62A DatasheetBUL62A Datasheet (PDF)

LAB MECHANICAL DATA Dimensions in mm (inches) 6.40 (0.252) 6.78 (0.267) 5.21 (0.205) 5.46 (0.215) SEME BUL62A 2.18 (0.086) 2.44 (0.096) 0.84 (0.033) 0.94 (0.037) ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications 1.09 (0.043) 1.30 (0.051) 5.97 (0.235) 6.22 (0.245) 1 2 3 0.76 (0.030) 1.14 (0.045) 0.64 (0.025) 0.89 (0.035) 8.89 (0.350) 9.78 (0.385) • • • • SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOL.

  BUL62A   BUL62A






Part Number BUL62B
Manufacturers Seme LAB
Logo Seme LAB
Description NPN Transistor
Datasheet BUL62A DatasheetBUL62B Datasheet (PDF)

LAB MECHANICAL DATA Dimensions in mm (inches) 6.40 (0.252) 6.78 (0.267) 5.21 (0.205) 5.46 (0.215) SEME BUL62B 2.18 (0.086) 2.44 (0.096) 0.84 (0.033) 0.94 (0.037) ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications 1.09 (0.043) 1.30 (0.051) 5.97 (0.235) 6.22 (0.245) 1 2 3 0.76 (0.030) 1.14 (0.045) 0.64 (0.025) 0.89 (0.035) 8.89 (0.350) 9.78 (0.385) • • • • SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOL.

  BUL62A   BUL62A







NPN Transistor

LAB MECHANICAL DATA Dimensions in mm (inches) 6.40 (0.252) 6.78 (0.267) 5.21 (0.205) 5.46 (0.215) SEME BUL62A 2.18 (0.086) 2.44 (0.096) 0.84 (0.033) 0.94 (0.037) ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications 1.09 (0.043) 1.30 (0.051) 5.97 (0.235) 6.22 (0.245) 1 2 3 0.76 (0.030) 1.14 (0.045) 0.64 (0.025) 0.89 (0.035) 8.89 (0.350) 9.78 (0.385) • • • • SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE FAST SWITCHING HIGH ENERGY RATING 2.31 (0.091) Typ. 2.31 (0.091) Typ. 0.46 (0.018) 0.61 (0.024) FEATURES • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. • Ion implant and high accuracy masking for tight control of characteristics from batch to batch. • Triple Guard Rings for improved control of high voltages. 4.60 (0.181) Typ. 1.04 (0.041) 1.14 (0.045) I–PAK (TO–251) Pin 1 – Base Pin 2 – Collector Pin 3 – Emitter ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC IC(PK) IB Ptot Tstg Semelab plc. Collector – Base Voltage Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IC = 0) Continuous Collector Current Peak Collector Current Base Current Total Dissipation at Tcase = 25°C Operating and Storage Temperature Range Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. 1000V 500V 10V 6A 10A 2.5A 25W –55 to +150°C Prel.


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