BUL642D2

www.DataSheet4U.com BUL642D2 High Speed, High Gain Bipolar NPN Transistor with Integrated Collector−Emitter and Built−in Efficient Antisaturation Network The BUL642D2 is a state−of−the−art High Speed High Gain Bipolar Transistor (H2BIP). Tight dynamic characteristics and lot to lot minimum spread (150 ns on storage time) make it ideally suitable for Light Ballast Application. A new development process brings avalanche energy capability, making the device extremely rugged. Features http://onsemi.com 3 AMPERES 825 VOLTS 75 WATTS POWER TRANSISTOR Low Base Drive Requirement High Peak DC Current Gain (55 Typical) @ IC = 300 mA/5 V Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread Integrated Collector−Emitter Free Wheeling Diode Fully Characterized Dynamic VCEsat “Six Sigma” Process Providing Tight and Reproducible Parameter Spreads Avalanche Energy 20 mJ Typical Capability Pb−Free Package is Available* MARKING DIAGRAM 4 TO−220AB CASE 221A STYLE 1 1 2 BUL642D2G AYWW 3 BUL642D2 A Y WW G = Device Code = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device BUL642D2 BUL642D2G Package TO−220 TO−220 (Pb−Free) Shipping 50 Units/Rail 50 Units/Rail *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 1 © Semiconductor Components Industries, LLC, 2005 August, 20...