LAB
MECHANICAL DATA Dimensions in mm
6.40 (0.252) 6.78 (0.267) 5.21 (0.205) 5.46 (0.215)
SEME
BUL66A
2.18 (0.086) 2.4...
LAB
MECHANICAL DATA Dimensions in mm
6.40 (0.252) 6.78 (0.267) 5.21 (0.205) 5.46 (0.215)
SEME
BUL66A
2.18 (0.086) 2.44 (0.096)
0.84 (0.033) 0.94 (0.037)
ADVANCED DISTRIBUTED BASE DESIGN HIGH
VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
Designed for use in electronic ballast applications SEMEFAB DESIGNED AND DIFFUSED DIE HIGH
VOLTAGE FAST SWITCHING HIGH ENERGY RATING
1.09 (0.043) 1.30 (0.051)
5.97 (0.235) 6.22 (0.245)
1
2
3
0.76 (0.030) 1.14 (0.045)
0.64 (0.025) 0.89 (0.035)
8.89 (0.350) 9.78 (0.385)
2.31 (0.091) Typ.
2.31 (0.091) Typ.
0.46 (0.018) 0.61 (0.024)
FEATURES
Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.
Pin 3 – Emitter
4.60 (0.181) Typ.
1.04 (0.041) 1.14 (0.045)
I-PAK(TO251)
Pin 1 – Base Pin 2 – Collector
Ion implant and high accuracy masking for tight control of characteristics from batch to batch. Triple Guard Rings for improved control of high
voltages.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO VCEO VEBO IC IC(PK) IB Ptot Tstg Semelab plc. Collector – Base
Voltage(IE=0) Collector – Emitter
Voltage (IB = 0) Emitter – Base
Voltage (IC = 0) Continuous Collector Current Peak Collector Current Base Current Total Dissipation at Tcase = 25°C Operating and Storage Temperature Range
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
350V 160V 10V 16A 25A 5A 25W –55 to +150°C
Prelim. 2/97...