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BUL67

STMicroelectronics

NPN Transistor

BUL67 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s s s SGS-THOMSON PREFERRED SALESTYPE HIGH RUGGEDNESS N...


STMicroelectronics

BUL67

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Description
BUL67 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s s s SGS-THOMSON PREFERRED SALESTYPE HIGH RUGGEDNESS NPN TRANSISTOR HIGH VOLTAGE CAPABILITY MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY CHARACTERISED AT 125oC 3 1 2 APPLICATIONS ELECTRONICS TRANFORMER FOR HALOGEN LAMPS s SWITCH MODE POWER SUPPLIES s TO-220 DESCRIPTION The BUL67 is manufactured using high voltage Multiepitaxial Mesa technology for cost-effective high performance. It uses a Hollow Emitter structure to enhance switching speeds. The BUL series is designed for use in lighting applications and in low cost switch-mode power supplies. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C St orage Temperature Max. Operating Junction Temperature Value 700 400 9 10 18 3.5 7 100 -65 to 150 150 Uni t V V V A A A A W o o C C September 1997 1/6 BUL67 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 1.25 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I CEO V CEO(sus) V EBO V CE(sat )∗ Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Cu...




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