BUL6822

Shenzhen SI Semiconductors Co., LTD. Product Specification BUL / BUL SERIES TRANSISTORS ●: RoHS ●FEATURES：■HIGH VOLTAGE CAPABILITY ■HIGH SPEED SWITCHING ●: ●APPLICATION: ■FLUORESCENT LAMP ●（Tc=25°C） ●Absolute Maximum Ratings（Tc=25°C） PARAMETER - Collector-Base Voltage - Collector-Emitter Voltage - Emitter- Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC PC Tj Tstg VALUE 600 400 9 0.8 10 150 -65-150 BUL6822 ■WIDE SOA ■RoHS COMPLIANT ■ELECTRONIC BALLAST TO-92 UNIT V V V A W °C °C ●（Tc=25°C） ●Electronic Characteristics（Tc=25°C） CHARACTERISTICS - Collector-Base Cutoff Current - www.DataSheet4U.com Collector-Emitter Cutoff Current - Collector-Emitter Voltage - Emitter- Base Voltage - Collector-Emitter Saturation Voltage - Base-Emitter Saturation Voltage DC Current Gain Storage Time Falling Time SYMBOL ICBO ICEO VCEO VEBO Vcesat Vbesat TEST CONDITION VCB=600V VCE=400V,IB=0 IC=10mA,IB=0 IE=1mA,IC=0 IC=100mA,IB=10mA IC=0.5A,IB=0.1A IC=100mA,IB=10mA VCE=5V,IC=1mA hFE VCE=10V,IC=0.1A VCE=5V,IC=0.8A tS tf VCC=5V,IC=0.1A, (UI9600) 7 10 5 2.0 4.2 µS 0.9 40 400 9 0.30 0.50 1.0 MIN MAX 100 250 UNIT µA µA V V V V Si semiconductors 2009.06 1 Shenzhen SI Semiconductors Co., LTD. Product Specification BUL / BUL SERIES TRANSISTORS SOA (DC) 1 BUL6822 Pc∝Tj Ic(A) 120 100 80 % IS/B 0.1 60 Ptot 40 20 0 0.01 1 hFE 10 100 Vce(V) 0 1000 hFE 50 100 150 Tj(℃) 200 hFE - Ic 100 hFE...