®
BUL903ED
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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s
s s s
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INTEGRATED ANTISATURATION AND PROTECTION...
®
BUL903ED
HIGH
VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
s
s
s s s
s s
INTEGRATED ANTISATURATION AND PROTECTION NETWORK INTEGRATED ANTIPARALLEL COLLECTOR EMITTER DIODE HIGH
VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED ARCING TEST SELF PROTECTED TO-220
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APPLICATIONS s LAMP ELECTRONIC BALLAST FOR FLUORESCENT LIGHTING USING 277V HALF BRIDGE CURRENT-FED CONFIGURATION DESCRIPTION The BUL903ED is manufactured using high
voltage Multi Epitaxial Planar technology for high switching speeds and high
voltage capability. The device has been designed in order to operate without baker clamp and transil protection. This enables saving from 2 up to 10 components in the application.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CES V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Emitter
Voltage (V BE = 0) Collector-Emitter
Voltage (IB = 0) Emitter-Base
Voltage (IC = 0) Collector Current Collector Peak Current (tp <5 ms) Base Current Base Peak Current (tp <5 ms) Total Dissipation at T c = 25 C Storage Temperature Max. O perating Junction Temperature
o
Value 900 400 7 5 8 2 4 70 -65 to 150 150
Uni t V V V A A A A W
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C C
June 1998
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BUL903ED
THERMAL DATA
R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 1.8 62.5
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol ...
