BUL903ED

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUL903ED DESCRIPTION ·INTEGRATED ANTISATURATION AND PROTECTIONNETWORK ·INTEGRATED ANTIPARALLELCOLLECTOR EMITTER DIODE ·HIGH VOLTAGECAPABILITY ·LOW SPREADOF DYNAMIC PARAMETERS ·MINIMUMLOT-TO-LOT SPREAD FOR RELIABLEOPERATION ·VERYHIGH SWITCHING SPEED ·ARCING TEST SELFPROTECTED APPLICATIONS ·LAMP ELECTRONIC BALLASTFOR FLUORESCENT LIGHTINGUSING 277V HALF BRIDGECURRENT-FED CONFIGURATION ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCES Collector-Emitter Voltage (VBE = 0) 900 VCEO Collector-Emitter Voltage(IB = 0) 400 VEBO Emitter-Base Voltage (IC = 0) 7 IC Collector Current-Continuous 5 ICM Collector Peak Current (tp <5 ms) 8 IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2 70 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Ju...