BUL903EDFP

www.DataSheet4U.com ® BUL903EDFP HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s s s s INTEGRATED ANTISATURATION AND PROTECTION NETWORK INTEGRATED ANTIPARALLEL COLLECTOR EMITTER DIODE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED ARCING TEST SELF PROTECTED FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING 3 1 2 TO-220FP s APPLICATIONS FOUR LAMP ELECTRONIC BALLAST FOR 120 V MAINS IN PUSH-PULL CONFIGURATION DESCRIPTION The BUL903EDFP is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. The device has been designed to operate without baker clamp and transil protection. This enables saving from 2 up to 10 components in the application. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P tot Visol T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p <5 ms) Base Current Base Peak Current (t p <5 ms) Total Dissipation at Tc = 25 o C Insulation Withstand Voltage (RMS) from All Three Leads to Exernal Heatsink Storage Temperature Max. Operating Junction Temperature Value 900 400 7 5 8 2 4 35 1500 -65 to 150 150 Unit V V V A A A A W V o o C C September 2003 1/7 BUL903EDFP THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case The...