BUL98B

BUL98B MECHANICAL DATA Dimensions in mm (inches) 40.01 (1.575) Max. 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. HIGH VOLTAGE FAST SWITCHING POWER TRANSISTOR DESCRIPTION The BUL98B is a silicon multi-epitaxial mesa NPN transistor in a JEDEC TO-3 metal case, intended for military and industrial applications. CECC SCREENING OPTIONS 22.23 (0.875) Max. 11.43 (0.450) 6.35 (0.250) 1.09 (0.043) 0.97 (0.038) Dia. 30.40 (1.197) 29.90 (1.177) 12.19 (0.48) 11.18 (0.44) 1.63 (0.064) 1.52 (0.060) 2 11.18 (0.440) 10.67 (0.420) 4.09 (0.161) 3.84 (0.151) 2 Pls 1 SPACE QUALITY LEVELS OPTIONS JAN LEVEL SCREENING OPTIONS 16.97 (0.668) 16.87 (0.664) HIGH SPEED SWITCHING (TO-3) PIN 2 – Emitter CASE – Collector PIN 1 – Base ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCER VCES VCEO VEBO IC ICM ICP IB IBM Ptot TSTG TJ Collector - Emitter Voltage (RBE ` 10 ) Collector - Base Voltage (VBE = 0V) Collector - Emitter Voltage (IB = 0) Emitter - Base Voltage (IC = 0) Collector Current Collector Peak Current non (tp = 5ms) Collector Peak Current non Rep (tp = 20µs) Base Current Base Peak Current (tp = 5ms) Total Power Dissipation Tcase < 25°C Storage Temperature Junction Temperature 850V 850V 400V 7V 25A 60A 80A 8A 30A 250W -65 to +200°C 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. Howe...