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BULD1101E
High voltage fast-switching NPN Power Transistor
General features
■ High voltage capabil...
www.DataSheet4U.com
BULD1101E
High
voltage fast-switching NPN Power Transistor
General features
■ High
voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ In compliance with the 2002/93/EC European
Directive
Description
The device is manufactured using high
voltage Multi-Epitaxial Planar technology for high switching speeds and high
voltage capability.
Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand an high collector current level during breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast.
Applications
■ Electronic ballast for fluorescent lighting
3 1
DPAK TO-252
IPAK TO-251
3 2 1
Internal schematic diagram
Order codes
Part number
Marking
BULD1101ET4 BULD1101E-1
BULD1101E BULD1101E
Package DPAK IPAK
May 2007
Rev 2
Packaging Tape & reel
Tube
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