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BULD118D-1
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
s
s s s
s
INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER ...
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BULD118D-1
HIGH
VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
s
s s s
s
INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE HIGH
VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED
2 1
3
APPLICATIONS: s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS DESCRIPTION The device is manufactured using high
voltage Multi Epitaxial Planar technology for high switching speeds and medium
voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies.
IPAK (TO-251)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CES V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Emitter
Voltage (V BE = 0) Collector-Emitter
Voltage (I B = 0) Emitter-Base
Voltage (I C = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C St orage Temperature Max. Operating Junction Temperature Value 700 400 9 2 4 1 2 20 -65 to 150 150 Uni t V V V A A A A W
o o
C C
June 1998
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BULD118D-1
THERMAL DATA
R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 6.25 100
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
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