® BULD118D-1
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
s INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE
s HIGH...
® BULD118D-1
HIGH
VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
s INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE
s HIGH
VOLTAGE CAPABILITY s LOW SPREAD OF DYNAMIC PARAMETERS s MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION s VERY HIGH SWITCHING SPEED
APPLICATIONS: s ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING s FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION The device is manufactured using high
voltage Multi Epitaxial Planar technology for high switching speeds and medium
voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies.
3 2 1
IPAK (TO-251)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VCES VCEO VEBO IC ICM IB IBM Ptot Tstg Tj
Parameter Collector-Emitter
Voltage (VBE = 0) Collector-Emitter
Voltage (IB = 0) Emitter-Base
Voltage (IC = 0) Collector Cur...