DatasheetsPDF.com

BULD25 Datasheet

Part Number BULD25
Manufacturers Power Innovations Limited
Logo Power Innovations Limited
Description NPN Transistor
Datasheet BULD25 DatasheetBULD25 Datasheet (PDF)

BULD25D, BULD25DR, BULD25SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE Copyright © 1997, Power Innovations Limited, UK JULY 1994 - REVISED SEPTEMBER 1997 q Designed Specifically for High Frequency Electronic Ballasts Integrated Fast trr Anti-parallel Diode, Enhancing Reliability Diode trr Typically 500 ns New Ultra Low-Height SOIC Power Package Tightly Controlled Transistor Storage Times Voltage Matched Integrated Transistor and Diode Characteristics Optimised for Cool Running B B NC NC E D.

  BULD25   BULD25






Part Number BULD25SL
Manufacturers Power Innovations Limited
Logo Power Innovations Limited
Description NPN Transistor
Datasheet BULD25 DatasheetBULD25SL Datasheet (PDF)

BULD25D, BULD25DR, BULD25SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE Copyright © 1997, Power Innovations Limited, UK JULY 1994 - REVISED SEPTEMBER 1997 q Designed Specifically for High Frequency Electronic Ballasts Integrated Fast trr Anti-parallel Diode, Enhancing Reliability Diode trr Typically 500 ns New Ultra Low-Height SOIC Power Package Tightly Controlled Transistor Storage Times Voltage Matched Integrated Transistor and Diode Characteristics Optimised for Cool Running B B NC NC E D.

  BULD25   BULD25







Part Number BULD25DR
Manufacturers Power Innovations Limited
Logo Power Innovations Limited
Description NPN Transistor
Datasheet BULD25 DatasheetBULD25DR Datasheet (PDF)

BULD25D, BULD25DR, BULD25SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE Copyright © 1997, Power Innovations Limited, UK JULY 1994 - REVISED SEPTEMBER 1997 q Designed Specifically for High Frequency Electronic Ballasts Integrated Fast trr Anti-parallel Diode, Enhancing Reliability Diode trr Typically 500 ns New Ultra Low-Height SOIC Power Package Tightly Controlled Transistor Storage Times Voltage Matched Integrated Transistor and Diode Characteristics Optimised for Cool Running B B NC NC E D.

  BULD25   BULD25







Part Number BULD25D
Manufacturers Power Innovations Limited
Logo Power Innovations Limited
Description NPN Transistor
Datasheet BULD25 DatasheetBULD25D Datasheet (PDF)

BULD25D, BULD25DR, BULD25SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE Copyright © 1997, Power Innovations Limited, UK JULY 1994 - REVISED SEPTEMBER 1997 q Designed Specifically for High Frequency Electronic Ballasts Integrated Fast trr Anti-parallel Diode, Enhancing Reliability Diode trr Typically 500 ns New Ultra Low-Height SOIC Power Package Tightly Controlled Transistor Storage Times Voltage Matched Integrated Transistor and Diode Characteristics Optimised for Cool Running B B NC NC E D.

  BULD25   BULD25







NPN Transistor

BULD25D, BULD25DR, BULD25SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE Copyright © 1997, Power Innovations Limited, UK JULY 1994 - REVISED SEPTEMBER 1997 q Designed Specifically for High Frequency Electronic Ballasts Integrated Fast trr Anti-parallel Diode, Enhancing Reliability Diode trr Typically 500 ns New Ultra Low-Height SOIC Power Package Tightly Controlled Transistor Storage Times Voltage Matched Integrated Transistor and Diode Characteristics Optimised for Cool Running B B NC NC E D PACKAGE (TOP VIEW) 1 2 3 4 8 7 6 5 q C C C C q q q q NC - No internal connection SL PACKAGE (TOP VIEW) 1 2 3 q q Diode-Transistor Charge Coupling Minimised to Enhance Frequency Stability Custom Switching Selections Available Surface Mount and Through-Hole Options PACKAGE Small-outline Small-outline taped and reeled Single-in-line PART # SUFFIX D DR SL C E q q device symbol C B description The new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s). This range of E switching transistors has tightly controlled storage times and an integrated fast trr anti-parallel diode. The revolutionary design ensures that the diode has both fast forward and reverse recovery times, achieving the same performance as a discrete anti-parallel diode plus transistor. The integrated diode has minimal charge coupling with the transistor, increasing frequency stability, especially in lower power circuits where the circulating currents .


2005-03-23 : 2N2857CSM    2N2880    2N2891    2N2894    2N2894    2N2894    2N2894A    2N2894ACSM    2N2894CSM    2N2894DCSM   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)