BULD25DR

BULD25D, BULD25DR, BULD25SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE Copyright © 1997, Power Innovations Limited, UK JULY 1994 - REVISED SEPTEMBER 1997 q Designed Specifically for High Frequency Electronic Ballasts Integrated Fast trr Anti-parallel Diode, Enhancing Reliability Diode trr Typically 500 ns New Ultra Low-Height SOIC Power Package Tightly Controlled Transistor Storage Times Voltage Matched Integrated Transistor and Diode Characteristics Optimised for Cool Running B B NC NC E D PACKAGE (TOP VIEW) 1 2 3 4 8 7 6 5 q C C C C q q q q NC - No internal connection SL PACKAGE (TOP VIEW) 1 2 3 q q Diode-Transistor Charge Coupling Minimised to Enhance Frequency Stability Custom Switching Selections Available Surface Mount and Through-Hole Options PACKAGE Small-outline Small-outline taped and reeled Single-in-line PART # SUFFIX D DR SL C E q q device symbol C B description The new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s). This range of E switching transistors has tightly controlled storage times and an integrated fast trr anti-parallel diode. The revolutionary design ensures that the diode has both fast forward and reverse recovery times, achieving the same performance as a discrete anti-parallel diode plus transistor. The integrated diode has minimal charge coupling with the transistor, increasing frequency stability, especially in lower power circuits where the circulating currents ...