BULD25D, BULD25DR, BULD25SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
Copyright © 1997, Power Innovations Limited, UK...
BULD25D, BULD25DR, BULD25SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
Copyright © 1997, Power Innovations Limited, UK JULY 1994 - REVISED SEPTEMBER 1997
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Designed Specifically for High Frequency Electronic Ballasts Integrated Fast trr Anti-parallel Diode, Enhancing Reliability Diode trr Typically 500 ns New Ultra Low-Height SOIC Power Package Tightly Controlled Transistor Storage Times
Voltage Matched Integrated Transistor and Diode Characteristics Optimised for Cool Running
B B NC NC E
D PACKAGE (TOP VIEW) 1 2 3 4 8 7 6 5
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C C C C
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NC - No internal connection
SL PACKAGE (TOP VIEW) 1 2 3
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Diode-Transistor Charge Coupling Minimised to Enhance Frequency Stability Custom Switching Selections Available Surface Mount and Through-Hole Options
PACKAGE Small-outline Small-outline taped and reeled Single-in-line PART # SUFFIX D DR SL
C E
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device symbol
C
B
description
The new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s). This range of E switching transistors has tightly controlled storage times and an integrated fast trr anti-parallel diode. The revolutionary design ensures that the diode has both fast forward and reverse recovery times, achieving the same performance as a discrete anti-parallel diode plus transistor. The integrated diode has minimal charge coupling with the transistor, increasing frequency stability, especially in lower power circuits where the circulating currents ...