BULD50SL

BULD50KC, BULD50SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE Copyright © 1997, Power Innovations Limited, UK FEBRUARY 1994 - REVISED SEPTEMBER 1997 q Designed Specifically for High Frequency Electronic Ballasts Integrated Fast trr Anti-Parallel Diode, Enhancing Reliability Diode trr Typically 1 µs New Low-Height SL Power Package, TO220 Pin-Compatible Tightly Controlled Transistor Storage Times Voltage Matched Integrated Transistor and Diode Characteristics Optimised for Cool Running Diode-Transistor Charge Coupling Minimised to Enhance Frequency Stability B C E B C E TO-220 PACKAGE (TOP VIEW) q 1 2 3 q q Pin 2 is in electrical contact with the mounting base. q q MDTRACA SL PACKAGE (TOP VIEW) 1 2 3 q q description The new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s). This range of switching transistors has tightly controlled storage times and an integrated fast trr antiparallel diode. The revolutionary design ensures that the diode has both fast forward and reverse recovery times, achieving the same performance as a discrete anti-parallel diode plus transistor. The integrated diode has minimal charge coupling with the transistor, increasing frequency stability, especially in lower power circuits where the circulating currents are low. By design, this new device offers a voltage matched integrated transistor and anti-parallel diode. device symbol C B E absolute maximum ratings at 25°C ¦ (un...