BUP 202
IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Av...
BUP 202
IGBT Preliminary data Low forward
voltage drop High switching speed Low tail current Latch-up free Avalanche rated Pin 1 G Type BUP 202 Maximum Ratings Parameter Collector-emitter
voltage Collector-gate
voltage Symbol Values 1000 1200 Unit V Pin 2 C Ordering Code Q67078-A4401-A2 Pin 3 E
VCE
IC
Package TO-220 AB
1000V 12A
VCE VCGR VGE IC
RGE = 20 kΩ
Gate-emitter
voltage DC collector current
± 20 A 12 8
TC = 25 °C TC = 90 °C
Pulsed collector current, tp = 1 ms
ICpuls
24 16
TC = 25 °C TC = 90 °C
Avalanche energy, single pulse
EAS
10
mJ
IC = 5 A, VCC = 24 V, RGE = 25 Ω L = 3.3 mH, Tj = 25 °C
Power dissipation
Ptot
100
W -55 ... + 150 -55 ... + 150 °C
TC = 25 °C
Chip or operating temperature Storage temperature
Tj Tstg
Semiconductor Group
1
Dec-06-1995
BUP 202
Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance IGBT thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit -
RthJC
≤1
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold
voltage Values typ. max. Unit
VGE(th)
4.5 5.5 2.8 3.8 4 1 0.1 6.5 3.3 4.3 4.5
V
VGE = VCE, IC = 0.3 mA
Collector-emitter saturation
voltage
VCE(sat)
-
VGE = 15 V, IC = 5 A, Tj = 25 °C VGE = 15 V, IC = 5 A, Tj = 125 °C VGE = 15 V, IC = 5 A, Tj = 150 °C
Zero gate
voltage collector current
ICES
100 300
µA
VCE = 1000 V, VGE = 0 V, Tj = 25 °C VCE = 1000 ...