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BUP212 Datasheet

Part Number BUP212
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description IGBT
Datasheet BUP212 DatasheetBUP212 Datasheet (PDF)

Infineon IGBT BUP 212 • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 G Type BUP 212 Maximum Ratings Parameter Collector-emitter voltage Emitter-collector voltage Collector-gate voltage Symbol Values 1200 Unit V Pin 2 C Ordering Code Q67040-A . . . . . Q67040-A4408 Pin 3 E VCE IC Package TO-220 AB 1200V 22A VCE VEC VCGR RGE = 20 kΩ Gate-emitter voltage DC collector current 1200 VGE IC ± 20 A 22 8 TC = 25 °C TC = 110 °C Puls.

  BUP212   BUP212






Part Number BUP213
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description IGBT
Datasheet BUP212 DatasheetBUP213 Datasheet (PDF)

BUP 213 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 G Type BUP 213 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V Pin 2 C Ordering Code Q67040-A4407-A2 Pin 3 E VCE IC Package TO-220 AB 1200V 32A VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 32 20 TC = 25 °C TC = 90 °C Pulsed collector current, tp = 1 ms ICpuls 6.

  BUP212   BUP212







IGBT

Infineon IGBT BUP 212 • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 G Type BUP 212 Maximum Ratings Parameter Collector-emitter voltage Emitter-collector voltage Collector-gate voltage Symbol Values 1200 Unit V Pin 2 C Ordering Code Q67040-A . . . . . Q67040-A4408 Pin 3 E VCE IC Package TO-220 AB 1200V 22A VCE VEC VCGR RGE = 20 kΩ Gate-emitter voltage DC collector current 1200 VGE IC ± 20 A 22 8 TC = 25 °C TC = 110 °C Pulsed collector current, tp = 1 ms ICpuls 44 16 TC = 25 °C TC = 110 °C Avalanche energy, single pulse EAS 10 mJ IC = 8 A, VCC = 50 V, RGE = 25 Ω L = 300 µH, Tj = 25 °C Power dissipation Ptot 125 W -55 ... + 150 -55 ... + 150 °C TC = 25 °C Chip or operating temperature Storage temperature Tj Tstg Semiconductor Group 1 May-05-1997 Infineon Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, chip case Symbol Values E 55 / 150 / 56 BUP 212 Unit - RthJC ≤1 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.5 3.1 3.4 4.3 6.5 3 3.7 - V VGE = VCE, IC = 0.3 mA, Tj = 25 °C Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 8 A, Tj = 25 °C VGE = 15 V, IC = 8 A, Tj = 125 °C VGE = 15 V, IC = 16 A, Tj = 25 °C VGE = 15 V, IC = 16 A, Tj = 125 °C Zero gate v.


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