BUP 213
IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Av...
BUP 213
IGBT Preliminary data Low forward
voltage drop High switching speed Low tail current Latch-up free Avalanche rated Pin 1 G Type BUP 213 Maximum Ratings Parameter Collector-emitter
voltage Collector-gate
voltage Symbol Values 1200 1200 Unit V Pin 2 C Ordering Code Q67040-A4407-A2 Pin 3 E
VCE
IC
Package TO-220 AB
1200V 32A
VCE VCGR VGE IC
RGE = 20 kΩ
Gate-emitter
voltage DC collector current
± 20 A 32 20
TC = 25 °C TC = 90 °C
Pulsed collector current, tp = 1 ms
ICpuls
64 40
TC = 25 °C TC = 90 °C
Avalanche energy, single pulse
EAS
22
mJ
IC = 15 A, VCC = 50 V, RGE = 25 Ω L = 200 µH, Tj = 25 °C
Power dissipation
Ptot
200
W -55 ... + 150 -55 ... + 150 °C
TC = 25 °C
Chip or operating temperature Storage temperature
Tj Tstg
Semiconductor Group
1
Nov-30-1995
BUP 213
Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance IGBT thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit -
RthJC
≤ 0.63
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold
voltage Values typ. max. Unit
VGE(th)
4.5 5.5 2.7 3.3 3.4 4.3 6.5 3.2 3.9 -
V
VGE = VCE, IC = 0.35 mA
Collector-emitter saturation
voltage
VCE(sat)
-
VGE = 15 V, IC = 15 A, Tj = 25 °C VGE = 15 V, IC = 15 A, Tj = 125 °C VGE = 15 V, IC = 30 A, Tj = 25 °C VGE = 15 V, IC = 30 A, Tj = 125 °C
Zero gate
voltage collector current
ICES
0.8
mA nA 100
VC...