INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUP22B/C
DESCRIPTION ·Collector-Emit...
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUP22B/C
DESCRIPTION ·Collector-Emitter Sustaining
Voltage-
: VCEO(SUS) = 400V(Min)-BUP22B = 450V(Min)-BUP22C
·High Switching Speed
APPLICATIONS ·Designed for use in converters, inverters, switching-
regulators, motor control systems etc.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector- Emitter
Voltage VBE=0
BUP22B BUP22C
750 850
V
VCEO
Collector-Emitter
Voltage
BUP22B BUP22C
400 450
V
VEBO
Emitter-Base
Voltage
9V
IC Collector Current-Continuous
8A
ICM Collector Current-Peak
20 A
IB Base Current-Continuous
4A
IBM Base Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ Junction Temperature
6A 125 W 150 ℃
Tstg Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 1.0 ℃/W
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUP22B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS)
Collector-Emitter Sustaining
Voltage
BUP22B BUP22C
IC= 50mA ;IB= 0
400 450
V
VCE(sat)
Collector-Emitter Saturation
Voltage
BUP22B IC= 6A; IB= 0.8A BUP22C IC= 6A; IB= 1A
1.5 V
1.5
VBE(sat)
Base-Emitter Saturation
Voltage
ICES Collector Cutoff Current IEBO Emitter Cutoff Current
BUP22B IC= 6A;...