BUP23B

www.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V (Min)-BUP23B 450V (Min)-BUP23C ·High Switching Speed APPLICATIONS ·Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BUP23B BUP23C BUP23B BUP23C VALUE 750 V 850 400 V 450 9 15 30 6 9 125 150 -65~150 V A A A A W ℃ ℃ UNIT BUP23B/C VCES Collector- Emitter Voltage(VBE= 0) VCEO Collector-Emitter Voltage VEBO IC ICM IB B Emitter-Base Voltage Collector Current- Continuous Collector Current-Peak Base Current- Continuous Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range IBM PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 0.7 UNIT ℃/W isc Website：www.iscsemi.cn Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BUP23B VCEO(SUS) Collector-Emitter Sustaining Voltage BUP23C BUP23B VCE(sat) Collector-Emitter Saturation Voltage BUP23C BUP23B VBE(sat) Base-Emitter Saturation Voltage BUP23C ICES IEBO hFE Collector Cutoff Current Emitter Cutoff Current DC Current Gain IC= 10A; IB= 1.67A VCE= VCESmax ; VBE= 0 VEB= 9V ; IC= 0 IC= 1A ; VCE= 5V IC= 1...