BUP 305 D
IGBT With Antiparallel Diode
Preliminary data
• Low forward voltage drop • High switching speed • Low tail c...
BUP 305 D
IGBT With Antiparallel Diode
Preliminary data
Low forward
voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode Pin 1
G
Pin 2
C
Pin 3
E
Type BUP 305 D Maximum Ratings Parameter Collector-emitter
voltage Collector-gate
voltage
VCE
IC
Package TO-218 AB
Ordering Code Q67040-A4225-A2
1200V 12A
Symbol
Values 1200 1200
Unit V
VCE VCGR VGE IC
RGE = 20 kΩ
Gate-emitter
voltage DC collector current
± 20 A 12 8
TC = 25 °C TC = 90 °C
Pulsed collector current, tp = 1 ms
ICpuls
24 16
TC = 25 °C TC = 90 °C
Diode forward current
IF
8
TC = 90 °C
Pulsed diode current, tp = 1 ms
IFpuls
48
TC = 25 °C
Power dissipation
Ptot
100
W -55 ... + 150 -55 ... + 150 °C
TC = 25 °C
Chip or operating temperature Storage temperature
Tj Tstg
Semiconductor Group
1
Dec-02-1996
BUP 305 D
Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, chip case Diode thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit -
RthJC RthJCD
1 3.1
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold
voltage Values typ. max. Unit
VGE(th)
4.5 5.5 2.8 3.8 6.5 3.3 4.3
V
VGE = VCE, IC = 0.3 mA, Tj = 25 °C
Collector-emitter saturation
voltage
VCE(sat)
-
VGE = 15 V, IC = 5 A, Tj = 25 °C VGE = 15 V, IC = 5 A, Tj = 125 °C
Zero gate
voltage collector current
ICES
0.35...