BUP314S

BUP 314S Preliminary data IGBT High switching speed Very low switching losses Low tail current Latch-up free Avalanche rated Pin 1 G Type BUP 314S Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V Pin 2 C Ordering Code C67040-A4207-A2 Pin 3 E VCE IC Package TO-218 AB 1200V 25A VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 25 17 TC = 25 °C TC = 90 °C Pulsed collector current, tp = 1 ms ICpuls 50 34 TC = 25 °C TC = 90 °C Avalanche energy, single pulse EAS 65 mJ IC = 25 A, VCC = 50 V, RGE = 25 Ω L = 200 µH, Tj = 25 °C Power dissipation Ptot 300 W -55 ... + 150 -55 ... + 150 °C TC = 25 °C Chip or operating temperature Storage temperature Tj Tstg Semiconductor Group 1 Feb-07-1997 BUP 314S Preliminary data Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit - RthJC ≤ 0.42 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CES 1200 5.5 5.5 4.6 8 6.6 6.5 7.6 - V VGE = 0 V, IC = 0.3 mA, Tj = 25 °C Gate threshold voltage VGE(th) 4.5 VGE = VCE, IC = 0.35 mA, Tj = 25 °C Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 15 A, Tj = 25 °C VGE = 15 V, IC = 15 A, Tj = 125 °C VGE = 15 V, IC = ...