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BUP401 Datasheet

Part Number BUP401
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description IGBT
Datasheet BUP401 DatasheetBUP401 Datasheet (PDF)

BUP 401 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 G Type BUP 401 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 600 600 Unit V Pin 2 C Ordering Code C67078-A4404-A2 Pin 3 E VCE 600V IC 29A Package TO-220 AB VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 29 18 TC = 25 °C TC = 90 °C Pulsed collector current, tp = 1 ms ICpuls 56 34.

  BUP401   BUP401






Part Number BUP403
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description IGBT
Datasheet BUP401 DatasheetBUP403 Datasheet (PDF)

BUP 403 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 G Type BUP 403 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 600 600 Unit V Pin 2 C Ordering Code C67078-A4406-A2 Pin 3 E VCE 600V IC 42A Package TO-220 AB VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current, (limited by bond wire) ± 20 A 42 32 TC = 60 °C TC = 90 °C Pulsed collector current,.

  BUP401   BUP401







Part Number BUP402
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description IGBT
Datasheet BUP401 DatasheetBUP402 Datasheet (PDF)

BUP 402 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 G Type BUP 402 Maximum Ratings Parameter Collector-emitter voltage Emitter-collector voltage Collector-gate voltage Symbol Values 600 Unit V Pin 2 C Ordering Code C67078-A4405-A2 Pin 3 E VCE 600V IC 36A Package TO-220 AB VCE VEC VCGR RGE = 20 kΩ Gate-emitter voltage DC collector current 600 VGE IC ± 20 A 36 22 TC = 25 °C TC = 90 °C Pulsed collector.

  BUP401   BUP401







Part Number BUP400D
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description IGBT
Datasheet BUP401 DatasheetBUP400D Datasheet (PDF)

BUP 400D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 G Type BUP 400D Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 600 600 Unit V Pin 2 C Ordering Code Q67040-A4423-A2 Pin 3 E VCE 600V IC 22A Package TO-220 AB VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 22 14 TC = 25 °C TC = 90 °C Pulsed .

  BUP401   BUP401







Part Number BUP400
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description IGBT
Datasheet BUP401 DatasheetBUP400 Datasheet (PDF)

BUP 400 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 G Type BUP 400 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 600 600 Unit V Pin 2 C Ordering Code C67078-A4403-A2 Pin 3 E VCE 600V IC 22A Package TO-220 AB VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 22 14 TC = 25 °C TC = 90 °C Pulsed collector current, tp = 1 ms ICpuls 44 28.

  BUP401   BUP401







IGBT

BUP 401 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 G Type BUP 401 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 600 600 Unit V Pin 2 C Ordering Code C67078-A4404-A2 Pin 3 E VCE 600V IC 29A Package TO-220 AB VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 29 18 TC = 25 °C TC = 90 °C Pulsed collector current, tp = 1 ms ICpuls 56 34 TC = 25 °C TC = 90 °C Avalanche energy, single pulse EAS 24 mJ IC = 15 A, VCC = 50 V, RGE = 25 Ω L = 200 µH, Tj = 25 °C Power dissipation Ptot 125 W -55 ... + 150 -55 ... + 150 °C TC = 25 °C Chip or operating temperature Storage temperature Tj Tstg Semiconductor Group 1 Jul-31-1996 BUP 401 Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit - RthJC ≤1 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.1 2.2 3 3.3 6.5 2.7 2.8 - V VGE = VCE, IC = 0.35 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 15 A, Tj = 25 °C VGE = 15 V, IC = 15 A, Tj = 125 °C VGE = 15 V, IC = 30 A, Tj = 25 °C VGE = 15 V, IC = 30 A, Tj = 125 °C Zero gate voltage collector current ICES 100 µA nA 100 VCE = 600 V, VGE .


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