Transistor. BUT11F Datasheet


BUT11F Datasheet PDF


BUT11F


Silicon Diffused Power Transistor
Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BUT11F

GENERAL DESCRIPTION
High-voltage, high-speed glass-passivated npn power transistor in a SOT186 envelope with electrically insulated mounting base,intended for use in converters, inverters, switching regulators, motor control systems, etc.

QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP. MAX. 850 400 5 10 20 1.5 3 800 UNIT V V A A W V A ns

Ths ≤ 25 ˚C

[INCLUDE] LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 850 450 5 10 2 4 20 150 150 UNIT V V A A A A W ˚C ˚C

Ths ≤ 25 ˚C

THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to ambient CONDITIONS with heatsink compound in free air TYP. 55 MAX. 3.95 UNIT K/W K/W

ISO...



BUT11F
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUT11F
GENERAL DESCRIPTION
High-voltage, high-speed glass-passivated npn power transistor in a SOT186 envelope with electrically insulated
mounting base,intended for use in converters, inverters, switching regulators, motor control systems, etc.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
tf
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
CONDITIONS
VBE = 0 V
Ths 25 ˚C
TYP.
-
-
-
-
-
-
-
-
MAX.
850
400
5
10
20
1.5
3
800
UNIT
V
V
A
A
W
V
A
ns
[INCLUDE]
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
Ths 25 ˚C
MIN.
-
-
-
-
-
-
-
-65
-
MAX.
850
450
5
10
2
4
20
150
150
UNIT
V
V
A
A
A
A
W
˚C
˚C
THERMAL RESISTANCES
SYMBOL
Rth j-hs
Rth j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
TYP.
-
55
MAX.
3.95
-
UNIT
K/W
K/W
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Visol Repetitive peak voltage from all R.H. 65% ; clean and dustfree
three terminals to external
heatsink
Cisol Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
- 1500 V
- 12 - pF
August 1997
1
Rev 1.000

BUT11F
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUT11F
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
ICES Collector cut-off current 1
ICES
IEBO
VCEOsust
Emitter cut-off current
Collector-emitter sustaining voltage
VCEsat
VBEsat
hFE
hFE
Collector-emitter saturation voltages
Base-emitter saturation voltage
DC current gain
CONDITIONS
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ˚C
VEB = 9 V; IC = 0 A
IB = 0 A; IC = 100 mA;
L = 25 mH
IC = 3.0 A; IB = 0.6 A
IC = 3.0 A; IB = 0.6 A
IC = 5 mA; VCE = 5 V
IC = 500 mA; VCE = 5 V
MIN.
-
-
-
450
-
-
10
10
TYP. MAX. UNIT
- 1.0 mA
- 2.0 mA
- 10 mA
- -V
- 1.5
- 1.3
18 35
20 35
V
V
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
Switching times (resistive load)
ton Turn-on time
ts Turn-off storage time
tf Turn-off fall time
Switching times (inductive load)
ts Turn-off storage time
tf Turn-off fall time
Switching times (inductive load)
ts Turn-off storage time
tf Turn-off fall time
CONDITIONS
ICon = 2.5 A; IBon = -IBoff = 0.5 A
ICon = 2.5 A; IBon = 0.5 A; LB = 1 µH;
-VBB = 5 V
ICon = 2.5 A; IBon = 0.5 A; LB = 1 µH;
-VBB = 5 V; Tj = 100 ˚C
TYP. MAX. UNIT
- 1 µs
- 4 µs
- 0.8 µs
1.1 1.4 µs
80 150 ns
1.2 1.5
140 300
µs
ns
+ 50v
100-200R
IC / mA
Horizontal
Oscilloscope
Vertical
6V
30-60 Hz
300R
1R
Fig.1. Test circuit for VCEOsust.
250
200
100
0
Fig.2.
VCE / V
min
VCEOsust
Oscilloscope display for VCEOsust.
1 Measured with half sine-wave voltage (curve tracer).
August 1997
2
Rev 1.000

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