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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUT11FI
DESCR...
www.DataSheet.co.kr
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUT11FI
DESCRIPTION ·High
Voltage ·High Speed Switching
·
APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL VCES VCEO VEBO IC ICM IB
B
PARAMETER Collector-Emitter
Voltage VBE= 0 Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current-Continuous Collector Current-Peak Base Current Base Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range
VALUE 850 400 9 5 10 2 4 35 150 -65~150
UNIT V V V A A A A W ℃ ℃
IBM PC Tj Tstg
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 3.57 UNIT ℃/W
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www.DataSheet.co.kr
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICES IEBO hFE-1 hFE-2 PARAMETER Collector-Emitter Sustaining
Voltage Collector-Emitter Saturation
Voltage Base-Emitter Saturation
Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC= 0.1A; IB= 0 IC= 3A; IB= 0.6A
B
BUT11FI
MIN 400
TYP.
MAX
UNIT V
1.5 1.3 1.0 2.0 10 10 10 35 35
V V mA mA
IC= 3A; IB= 0.6A
B
VCE= 850V; VBE= 0 VCE= 850V; VBE= 0; Tj= 125℃ VEB= 9V; IC= 0 IC= 5mA; VCE= 5V IC= 0.5A; VCE= 5V
Sw...