BUX11

SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX11 High Current Capability. Hermetic TO3 Metal package. Designed For Switching and Linear Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEX VCEO VEBO IC ICM IB PD TJ Tstg Collector – Base Voltage VBE = -1.5V Collector – Emitter Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current tp = 10ms Peak Collector Current Base Current TC = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range www.DataSheet.net/ 250V 250V 200V 7V 20A 25A 4A 110W 0.63W/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols RθJC Parameters Thermal Resistance, Junction To Case Min. Typ. Max. 1.59 Units °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 8171 Issue 1 Page 1 of 3 Datasheet pdf - http://www.DataSheet4U.co.kr/ Website: http://www.semelab-tt.com SILICON MULTI-EPITAXIAL...