BUX40A

isc Silicon NPN Power Transistor DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 125V(Min) ·High Current Capability ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching and linear applications in military equipment. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO(SUS) Collector-Emitter Voltage 125 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 20 A ICM Collector Current-Peak 28 A IB Base Current-Continuous PC Collector Power Dissipation @TC=100℃ TJ Junction Temperature 4 A 120 W 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.46 ℃/W BUX40A isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 15A; IB= 1.88A VBE(sat) Base-Emitter Saturation Voltage IC= 15A; IB= 1.88A ICEO Collector Cutoff Current ICBO Collector Cutoff Current IEBO Emitter Cutoff Current VCE= 100V;IB= 0 VCB= 160V; IE= 0 VCB= 160V; IE= 0; TC= 125℃ VEB= 5V; IC=0 hFE-1 DC Curre...