BUX48B

isc Silicon NPN Power Transistor BUX48B DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 600V (Min) ·High Current Capability ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching and industrial applications from single and three-phase mains. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCER VCES Collector-Emitter Voltage (RBE= 10Ω) Collector-Emitter Voltage (VBE= 0) VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak tp< 5ms IB Base Current-Continuous IBM Base Current-peak tp< 5ms PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 1200 V 1200 V 600 V 7 V 15 A 30 A 4 A 20 A 175 W 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCER(SUS) Collector-Emitter Sustaining Voltage IC= 0.5A; L= 2mH; Vclamp= 1200V RBE= 10Ω VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A; IB= 1.5A VCE (sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 4A VBE(sat)-1 Base-Emitter Saturati...