BUX82
MECHANICAL DATA Dimensions in mm (inches)
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (...
BUX82
MECHANICAL DATA Dimensions in mm (inches)
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0.043)
29.9 (1.177) 30.4 (1.197)
16.64 (0.655) 17.15 (0.675)
1
2
3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50)
22.23 (0.875) max.
Applications
The BUX82 is an epitaxial silicon NPN planar transistor that has high current and high power handling capability and high switching speed. This device is especially suitable for switching–control
amplifiers, power gates, switching regulators, power-switching circuits converters, inverters and control circuits.Other recommended applications include DC–RF
amplifiers and power oscillators.
TO–204AA (TO–3)
PIN 1 — Base PIN 2 — Emitter Case is Collector.
ABSOLUTE MAXIMUM RATINGS (Tj = 25°C unless otherwise stated)
VCESM VCER VCEO IC ICM IB Ptot TSTG TJ Collector – Emitter
Voltage Collector – Emitter
Voltage Collector – Emitter
Voltage(open base) Collector Current (d.c) Peak Collector Current Base Current (d.c) Total Power Dissipation Tmb = 50°C Storage Temperature Range Maximum Junction Temperature tp = 2ms VBE = 0 RBE = 100W 800V 500V 400V 6A 8A 2A 60W -65 to +150°C +150°C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail:
[email protected] Website: http://www.semelab.co.uk
Prelim.9/99
BUX82
ELECTRICAL CHARACTERISTICS (Tj = 25°...
