SIPMOS® Power Transistor
q N channel q Enhancement mode q FREDFET
BUZ 205
Type BUZ 205
VDS
400 V
ID
6.0 A
RDS (on)
...
SIPMOS® Power Transistor
q N channel q Enhancement mode q FREDFET
BUZ 205
Type BUZ 205
VDS
400 V
ID
6.0 A
RDS (on)
1.0 Ω
Package 1) TO-220 AB
Ordering Code C67078-A1401-A2
Maximum Ratings Parameter Continuous drain current, TC = 35 ˚C Pulsed drain current, TC = 25 ˚C Drain-source
voltage Drain-gate
voltage, RGS = 20 kΩ Gate-source
voltage Power dissipation, TC = 25 ˚C Operating and storage temperature range Thermal resistance, chip-case DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values 6.0 24 400 400 ± 20 75 – 55 ... + 150 ≤ 1.67 E 55/150/56 W ˚C K/W – V Unit A
ID ID puls VDS VDGR VGS Ptot Tj , Tstg Rth JC
1) See chapter Package Outlines.
Semiconductor Group
508
BUZ 205
Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static characteristics Drain-source breakdown
voltage VGS = 0 V, ID = 0.25 mA Gate threshold
voltage VGS = VDS , ID = 1 mA Zero gate
voltage drain current Values typ. max. Unit
V(BR) DSS VGS (th) IDSS
400 2.1
– 4.0
– 4.0
V
µA – – 20 100 10 0.9 250 1000 100 1.0 nA Ω
VDS = 400 V, VGS = 0 V Tj = 25 ˚C Tj = 125 ˚C
Gate-source leakage current
IGSS RDS (on)
– –
VGS = 20 V, VDS = 0 V
Drain-source on-resistance VGS = 10 V, ID = 4.0 A Dynamic characteristics Forward transconductance
VDS ≥ 2 x ID x RDS(on)max , ID = 4.0 A
Input capacitance
gfs Ciss Coss Crss
1.7 – – – – – – –
2.9 1500 120 35 30 40 110 50
– 2000 180 60 45 60 140 65
S pF
VGS = 0 V, VDS = 25 V, f = 1 M...