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BUZ72 Datasheet

Part Number BUZ72
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description Power Transistor
Datasheet BUZ72 DatasheetBUZ72 Datasheet (PDF)

BUZ 72 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 72 VDS 100 V ID 10 A RDS(on) 0.2 Ω Package TO-220 AB Ordering Code C67078-S1313-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 10 Unit A ID IDpuls 40 TC = 25 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 10 7.9 mJ ID = 10 A, VDD = 25 V,.

  BUZ72   BUZ72






Part Number BUZ72
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet BUZ72 DatasheetBUZ72 Datasheet (PDF)

isc N-Channel Mosfet Transistor ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·High Input Impedance ·Low Drive Requirements ·Majority Carrier Device ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION Designed especially for applications such as switching regulators, switching converters,motor drivers ,relay drivers. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0).

  BUZ72   BUZ72







Part Number BUZ72
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description Power Transistor
Datasheet BUZ72 DatasheetBUZ72 Datasheet (PDF)

SIPMOS ® Power Transistor BUZ 72 • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS 100 V ID 10 A RDS(on) 0.2 Ω Package Ordering Code BUZ 72 TO-220 AB C67078-S1313-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 25 ˚C ID A 10 Pulsed drain current TC = 25 ˚C IDpuls 40 IAR EAR EAS Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse ID = 10 A, VDD = 25 V, RG.

  BUZ72   BUZ72







Power Transistor

BUZ 72 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 72 VDS 100 V ID 10 A RDS(on) 0.2 Ω Package TO-220 AB Ordering Code C67078-S1313-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 10 Unit A ID IDpuls 40 TC = 25 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 10 7.9 mJ ID = 10 A, VDD = 25 V, RGS = 25 Ω L = 885 µH, Tj = 25 °C Gate source voltage Power dissipation 59 VGS Ptot ± 20 40 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Semiconductor Group Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 ≤ 3.1 75 E 55 / 150 / 56 °C K/W 1 07/96 BUZ 72 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 100 3 0.1 10 10 0.15 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 µA VDS = 100 V, VGS = 0 V, Tj = 25 °C VDS = 100 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS 100 nA Ω 0.2 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = 10 V, ID = 6 A Semiconductor Group 2 07/96 BUZ 72 El.


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