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BUZ73L Datasheet

Part Number BUZ73L
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description Power Transistor
Datasheet BUZ73L DatasheetBUZ73L Datasheet (PDF)

BUZ 73 L SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Pin 1 G Type BUZ 73 L Pin 2 D Pin 3 S VDS 200 V ID 7A RDS(on) 0.4 Ω Package TO-220 AB Ordering Code C67078-S1328-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 7 Unit A ID IDpuls 28 TC = 28 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 7 6.5 mJ ID = 7 A, .

  BUZ73L   BUZ73L






Part Number BUZ73L
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description Power Transistor
Datasheet BUZ73L DatasheetBUZ73L Datasheet (PDF)

SIPMOS ® Power Transistor BUZ 73L • N channel • Enhancement mode • Avalanche-rated • Logic Level Pin 1 Pin 2 Pin 3 G Type D Ordering Code S VDS 200 V ID 7A RDS(on) 0.4 Ω Package BUZ 73 L TO-220 AB C67078-S1328-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 28 ˚C ID A 7 Pulsed drain current TC = 25 ˚C IDpuls 28 IAR EAR EAS Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse ID = 7 A, VDD.

  BUZ73L   BUZ73L







Power Transistor

BUZ 73 L SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Pin 1 G Type BUZ 73 L Pin 2 D Pin 3 S VDS 200 V ID 7A RDS(on) 0.4 Ω Package TO-220 AB Ordering Code C67078-S1328-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 7 Unit A ID IDpuls 28 TC = 28 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 7 6.5 mJ ID = 7 A, VDD = 50 V, RGS = 25 Ω L = 3.67 mH, Tj = 25 °C Gate source voltage Gate-source peak voltage,aperiodic Power dissipation 120 VGS Vgs Ptot ± 14 ± 20 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 40 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 ≤ 3.1 75 E 55 / 150 / 56 °C K/W Semiconductor Group 1 07/96 BUZ 73 L Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 200 1.6 0.1 10 10 0.3 2 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 1.2 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 µA VDS = 200 V, VGS = 0 V, Tj = 25 °C VDS = 200 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS 100 nA Ω 0.4 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) V.


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