BUZ73LH

SIPMOS ® Power Transistor BUZ 73L H N channel Enhancement mode Avalanche-rated Logic Level . Halogen-free according to IEC61249-2-21 Pin 1 Pin 2 Pin 3 G Type D Pb-free S VDS 200 V ID 7A RDS(on) 0.4 Ω Package BUZ 73 L H PG-TO220-3 Yes Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 28 ˚C ID A 7 Pulsed drain current TC = 25 ˚C IDpuls 28 IAR E AR E AS Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse ID = 7 A, VDD = 50 V, RGS = 25 Ω 7 6.5 mJ L = 3.67 mH, Tj = 25 ˚C 120 VGS Gate source voltage ESD-Sensitivity HBM as per MIL-STD 883 Power dissipation TC = 25 ˚C ± 20 Class 1 V Ptot W 40 Tj Tstg RthJC RthJA Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient -55 ... + 150 -55 ... + 150 ˚C ≤ 3.1 75 E 55 / 150 / 56 K/W DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Rev. 2.4 Page 1 2009-11-10 http://www.Datasheet4U.com BUZ 73L H Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C V (BR)DSS V 200 V GS(th) - - Gate threshold voltage V GS=VDS, ID = 1 mA 1.2 IDSS 1.6 2 µA Zero gate voltage drain current V DS = 200 V, V GS = 0 V, Tj = 25 ˚C V DS = 200 V, V GS = 0 V, Tj = 125 ˚C - 0.1 1 100 nA IGSS 10 Gate-source ...