BUZ901P

MAGNA TEC 4.69 5.31 1.49 2.49 (0.185) (0.209) (0.059) (0.098) 6.15 (0.242) BSC 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) BUZ900P BUZ901P MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS 3.55 (0.140) 3.81 (0.150) 4.50 (0.177) M ax. 1 2 3 1.65 (0.065) 2.13 (0.084) 2.87 (0.113) 3.12 (0.123) FEATURES HIGH SPEED SWITCHING N–CHANNEL POWER MOSFET SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (160V & 200V) HIGH ENERGY RATING ENHANCEMENT MODE INTEGRAL PROTECTION DIODE P–CHANNEL ALSO AVAILABLE AS BUZ905P & BUZ906P 0.40 (0.016) 0.79 (0.031) 19.81 (0.780) 20.32 (0.800) 1.01 (0.040) 1.40 (0.055) 2.21 (0.087) 2.59 (0.102) 5.25 (0.215) BSC TO–247 Pin 1 – Gate Pin 2 – Source Pin 3 – Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSX Drain – Source Voltage VGSS ID ID(PK) PD Tstg Tj RθJC Gate – Source Voltage Continuous Drain Current Body Drain Diode Total Power Dissipation Storage Temperature Range Maximum Operating Junction Temperature Thermal Resistance Junction – Case @ Tcase = 25°C BUZ900P 160V ±14V 8A 8A 125W –55 to 150°C 150°C 1.0°C/W BUZ901P 200V Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612. Prelim. 10/94 MAGNA TEC Characteristic BVDSX BVGSS VGS(OFF) VDS(SAT)* Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Gate – Source Cut–Off Voltage Drain – Source Saturation Voltage BUZ900P BUZ901P STATIC CHARACTERISTICS (Tcase = 25...