BUZ901X4S

MAGNA TEC 3 1 .5 (1 .2 4 0 ) 3 1 .7 (1 .2 4 8 ) 7 .8 (0 .3 0 7 ) 8 .2 (0 .3 2 2 ) 1 1 .8 (0 .4 6 3 ) 1 2 .2 (0 .4 8 0 ) W = 4 .1 (0 .1 6 1 ) 4 .3 (0 .1 6 9 ) H= 4 .8 (0 .1 8 7 ) 4 .9 (0 .1 9 3 ) (4 places) 8 .9 (0 .3 5 0 ) 9 .6 (0 .3 7 8 ) BUZ900X4S BUZ901X4S NEW PRODUCT UNDER DEVELOPMENT MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET Hex Nut M 4 (4 places) POWER MOSFETS FOR AUDIO APPLICATIONS 2 5 .2 (0 .9 9 2 ) 2 5 .4 (1 .0 0 0 ) 1 R 2 4 .0 (0 .1 5 7 ) 4 .2 (0 .1 6 5 ) 0 .7 5 (0 .0 3 0 ) 0 .8 5 (0 .0 3 3 ) 1 2 .6 (0 .4 9 6 ) 1 2 .8 (0 .5 0 4 ) FEATURES HIGH SPEED SWITCHING 4 3.3 (0 .1 2 9) 3.6 (0.14 3 ) 1 4 .9 (0.58 7 ) 1 5 .1 (0.59 4 ) 3 0 .1 (1 .1 8 5 ) 3 0 .3 (1 .1 9 3 ) 3 8 .0 (1.4 9 6 ) 3 8 .2 (1.5 0 4 ) 3 5 .1 (0 .2 0 1 ) 5 .9 (0 .2 3 2 ) 1 .9 5 (0 .0 7 7 ) 2 .1 4 (0 .0 8 4 ) R = 4 .0 (0 .1 57 ) (2 P lac e s) N–CHANNEL POWER MOSFET SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (160V & 200V) HIGH ENERGY RATING SOT227 Pin 1 – Drain Pin 2 – Source Pin 3 – Gate Pin 4 – Drain ENHANCEMENT MODE INTEGRAL PROTECTION DIODE P–CHANNEL ALSO AVAILABLE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSX Drain – Source Voltage VGS ID ID(PK) PD Tstg Tj RθJC Gate – Source Voltage Continuous Drain Current Body Drain Diode Total Power Dissipation Storage Temperature Range Maximum Operating Junction Temperature Thermal Resistance Junction – Case @ Tcase = 25°C BUZ900X4S 160V BUZ901X4S 200V ±14V 32A 32A 500W –55 to 150°C 1...