BUZ902DP

MAGNA TEC 20.0 5.0 BUZ902DP BUZ903DP MECHANICAL DATA Dimensions in mm 3.3 Dia. N–CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS 1 2.0 2 3 2.0 1.0 FEATURES HIGH SPEED SWITCHING SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (220V & 250V) HIGH ENERGY RATING 1.2 0.6 2.8 3.4 ENHANCEMENT MODE INTEGRAL PROTECTION DIODES COMPLIMENTARY P–CHANNEL BUZ907DP & BUZ908DP 5.45 5.45 TO-3PBL Pin 1 – Gate www.DataSheet4U.com Pin 2 – Source Case – Source Pin 3 – Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSX Drain – Source Voltage VGSS ID ID(PK) PD Tstg Tj RθJC Gate – Source Voltage Continuous Drain Current Body Drain Diode Total Power Dissipation Storage Temperature Range Maximum Operating Junction Temperature Thermal Resistance Junction – Case @ Tcase = 25°C BUZ902DP 220V 16A 16A 250W –55 to 150°C 150°C 0.5°C/W BUZ903DP 250V ±14V Magnatec. Telephone (01455) 554711. Fax (01455) 558843 Prelim. 01/97 MAGNA TEC Characteristic BVDSX BVGSS VGS(OFF) VDS(SAT)* RDS(on)* BUZ902DP BUZ903DP STATIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Test Conditions BUZ902DP BUZ903DP IG = ±100µA ID = 100mA ID = 16A ID = 16A VDS = 220V IDSX Drain – Source Cut–Off Current VGS = -10V BUZ902DP VDS = 250V BUZ903DP yfs* Forward Transfer Admittance VDS = 10V ID = 3A 1.4 4 S 10 mA ID = 10mA Gate – Source Breakdown Voltage VDS = 0 Gate – Source Cut–Off Voltage Drain – Source Saturation Voltage Static – Source Resistance VDS = 10V VGD = 0 VGS...