MAGNA
TEC
4.69 5.31 1.49 2.49 (0.185) (0.209) (0.059) (0.098) 6.15 (0.242) BSC 15.49 (0.610) 16.26 (0.640) 20.80 (0.819...
MAGNA
TEC
4.69 5.31 1.49 2.49 (0.185) (0.209) (0.059) (0.098) 6.15 (0.242) BSC 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845)
BUZ905P BUZ906P
MECHANICAL DATA Dimensions in mm (inches)
P–CHANNEL POWER
MOSFET
POWER
MOSFETS FOR AUDIO APPLICATIONS
3.55 (0.140) 3.81 (0.150)
4.50 (0.177) M ax.
1
2
3
1.65 (0.065) 2.13 (0.084) 2.87 (0.113) 3.12 (0.123)
FEATURES
HIGH SPEED SWITCHING P–CHANNEL POWER
MOSFET SEMEFAB DESIGNED AND DIFFUSED HIGH
VOLTAGE (160V & 200V) HIGH ENERGY RATING ENHANCEMENT MODE INTEGRAL PROTECTION DIODE N–CHANNEL ALSO AVAILABLE AS BUZ900P & BUZ901P
0.40 (0.016) 0.79 (0.031)
19.81 (0.780) 20.32 (0.800) 1.01 (0.040) 1.40 (0.055)
2.21 (0.087) 2.59 (0.102)
5.25 (0.215) BSC
TO–247
Pin 1 – Gate Pin 2 – Source Pin 3 – Drain
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated) VDSX Drain – Source
Voltage VGSS ID ID(PK) PD Tstg Tj RθJC Gate – Source
Voltage Continuous Drain Current Body Drain Diode Total Power Dissipation Storage Temperature Range Maximum Operating Junction Temperature Thermal Resistance Junction – Case @ Tcase = 25°C BUZ905P -160V ±14V -8A -8A 125W –55 to 150°C 150°C 1.0°C/W BUZ906P -200V
Magnatec.
Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
Prelim. 10/94
MAGNA
TEC
Characteristic
BVDSX BVGSS VGS(OFF) VDS(SAT)* Drain – Source Breakdown
Voltage Gate – Source Breakdown
Voltage Gate – Source Cut–Off
Voltage Drain – Source Saturation
Voltage
BUZ905P BUZ906P
STATIC CHARACTERISTICS (Tcase ...