BUZ908D

www.DataSheet4U.com MAGNA TEC 25.0 +0.1 -0.15 BUZ907D BUZ908D MECHANICAL DATA Dimensions in mm P–CHANNEL POWER MOSFET 8.7 Max. 1.50 Typ. 11.60 ± 0.3 10.90 ± 0.1 POWER MOSFETS FOR AUDIO APPLICATIONS 30.2 ± 0.15 Ø 20 M ax. 39.0 ± 1.1 16.9 ± 0.15 1 2 Ø 1.0 FEATURES HIGH SPEED SWITCHING SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (220V & 250V) HIGH ENERGY RATING R 4.0 ± 0.1 R 4.4 ± 0.2 ENHANCEMENT MODE INTEGRAL PROTECTION DIODES COMPLIMENTARY N–CHANNEL BUZ902D & BUZ903D Case – Source TO–3 Pin 1 – Gate Pin 2 – Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSX Drain – Source Voltage VGSS ID ID(PK) PD Tstg Tj RθJC Gate – Source Voltage Continuous Drain Current Body Drain Diode Total Power Dissipation Storage Temperature Range Maximum Operating Junction Temperature Thermal Resistance Junction – Case @ Tcase = 25°C BUZ907D -220V ±14V -16A -16A 250W –55 to 150°C 150°C 0.5°C/W BUZ908D -250V Magnatec. Telephone (01455) 554711. Fax (01455) 552612. Prelim. 01/97 MAGNA TEC Characteristic BVDSX BVGSS VGS(OFF) VDS(SAT)* RDS(on)* BUZ907D BUZ908D STATIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Test Conditions BUZ907D BUZ908D IG = ±100µA ID = -100mA ID = -16A ID = -16A VDS = -220V IDSX Drain – Source Cut–Off Current VGS = 10V BUZ907D VDS = -250V BUZ908D yfs* Forward Transfer Admittance VDS = -10V ID = -3A 0.7 4 S -10 mA ID = -10mA Gate – Source Breakdown Voltage VDS = 0 Gate – Source Cut–Off Voltage Drain – Source Sat...