DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D118
BY328 Damper diode
Product specification Supersedes data...
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D118
BY328 Damper diode
Product specification Supersedes data of May 1996 1996 Sep 30
Philips Semiconductors
Product specification
Damper diode
FEATURES Glass passivated High maximum operating temperature Low leakage current Excellent stability Available in ammo-pack Also available with preformed leads for easy insertion. APPLICATIONS Damper diode in high frequency horizontal deflection circuits up to 38 kHz. DESCRIPTION Rugged glass package, using a high temperature alloyed construction.
BY328
This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.
2/3 page k (Datasheet)
Fig.1 Simplified outline (SOD64) and symbol.
,
a
MAM104
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRSM VRRM VR IFWM PARAMETER non-repetitive peak reverse
voltage repetitive peak reverse
voltage continuous reverse
voltage working peak forward current Ttp = 55 °C; lead length = 10 mm see Fig.2 Tamb = 55 °C; PCB mounting (see Fig.5); see Fig.2 Tamb = 55 °C; PCB mounting (see Fig.4); see Fig 2 IFRM IFSM repetitive peak forward current non-repetitive peak forward current t = 10 ms half sinewave; Tj = Tj max prior to surge; VR = VRRMmax CONDITIONS MIN. − − − − − − − − MAX. 1500 1500 1400 6.0 4.7 3.0 10 60 V V V A A A A A UNIT
Tstg Tj
storage temperature junction temperature
−65 −65
+175 +150
°C °C
1996 Sep 30
2
Philips Sem...