BYD63

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D119 BYD63 Ripple blocking diode Product specification Supersedes data of November 1995 File under Discrete Semiconductors, SC01 1996 Jun 10 Philips Semiconductors Product specification Ripple blocking diode FEATURES Glass passivated High maximum operating temperature Low leakage current Excellent stability Guaranteed minimum turn-on time for absorbing forward current transients and oscillations Specially designed as rectifier in the auxiliary power supply in e.g. switched mode power supplies Available in ammo-pack. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF(AV) PARAMETER repetitive peak reverse voltage continuous reverse voltage average forward current averaged over any 20 ms period; Ttp = 55 °C; lead length = 10 mm; see Fig.2; see also Fig.4 averaged over any 20 ms period; Tamb = 65 °C; PCB mounting (Fig.8); see Fig.3; see also Fig.4 IFRM IFSM repetitive peak forward current non-repetitive peak forward current Ttp = 55 °C Tamb = 65 °C t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax CONDITIONS MIN. − − − handbook, 4 columns BYD63 DESCRIPTION Cavity free cylindrical glass package through Implotec™(1) technology. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. k a MAM123 Fig.1 Simplified outline (SOD81) and symbol. MAX. 30...