BYG10D

BYG10 Vishay Telefunken Silicon Mesa SMD Rectifier Features D D D D D Controlled avalanche characteristics Glass passivated junction Low reverse current High surge current capability Wave and reflow solderable 15 811 Applications Surface mounting General purpose rectifier Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage g =Repetitive peak reverse voltage Test Conditions Type BYG10D BYG10G BYG10J BYG10K BYG10M Symbol VR=VRRM VR=VRRM VR=VRRM VR=VRRM VR=VRRM IFSM IFAV Tj=Tstg I(BR)R=1A, Tj=25°C ER Value 200 400 600 800 1000 30 1.5 –55...+150 20 Unit V V V V V A A °C mJ Peak forward surge current Average forward current Junction and storage temperature range Pulse energy in avalanche mode, non repetitive (inductive load switch off) tp=10ms, half sinewave Maximum Thermal Resistance Tj = 25_C Parameter Test Conditions Junction lead TL=const. Junction ambient mounted on epoxy–glass hard tissue mounted on epoxy–glass hard tissue, 50mm2 35mm Cu mounted on Al–oxid–ceramic (Al2O3), 50mm2 35mm Cu Symbol RthJL RthJA RthJA RthJA Value 25 150 125 100 Unit K/W K/W K/W K/W Document Number 86008 Rev. 3, 24-Jun-98 www.vishay.de FaxBack +1-408-970-5600 1 (5) BYG10 Vishay Telefunken Electrical Characteristics Tj = 25_C Parameter Forward voltage g Reverse current Reverse recovery time Test Conditions IF=1A IF=1.5A VR=VRRM VR=VRRM, Tj=100°C IF=0.5A, IR=1A, iR=0.25A Type Symbol VF VF IR IR trr Min Typ Max 1.1 1.15 1 10 4 Unit V V mA mA ms Characteristics (Tj = 25_C unless ot...