BYG60M

DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D168 BYG60 series Fast soft-recovery controlled avalanche rectifiers Preliminary specification File under Discrete Semiconductors, SC01 1996 Jun 05 Philips Semiconductors Preliminary specification Fast soft-recovery controlled avalanche rectifiers FEATURES Glass passivated High maximum operating temperature Low leakage current Excellent stability Guaranteed avalanche energy absorption capability UL 94V-O classified plastic package Shipped in 12 mm embossed tape. Top view handbook, 4 columns BYG60 series The well-defined void-free case is of a transfer-moulded thermo-setting plastic. DESCRIPTION DO-214AC surface mountable package with glass passivated chip. cathode band a k Side view MSA474 Fig.1 Simplified outline (DO-214AC; SOD106) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BYG60D BYG60G BYG60J BYG60K BYG60M VR continuous reverse voltage BYG60D BYG60G BYG60J BYG60K BYG60M IF(AV) average forward current averaged over any 20 ms period; Ttp = 100 °C; see Fig.2 averaged over any 20 ms period; Al2O3 PCB mounting (see Fig.7); Tamb = 60 °C; see Fig.3 averaged over any 20 ms period; epoxy PCB mounting (see Fig.7); Tamb = 60 °C; see Fig.3 IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax − − − − − − − 200 400 600 800 1000 1.90 0.90 V V V V V A A PARAMETER repetitive peak reverse voltage − − −...