BYG80G

DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D168 BYG80 series Ultra fast low-loss controlled avalanche rectifiers Product specification Supersedes data of 1996 May 24 1997 Nov 25 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers FEATURES Glass passivated High maximum operating temperature Low leakage current Excellent stability Guaranteed avalanche energy absorption capability UL 94V-O classified plastic package Shipped in 12 mm embossed tape. Top view Side view handbook, 4 columns BYG80 series The well-defined void-free case is of a transfer-moulded thermo-setting plastic. DESCRIPTION DO-214AC surface mountable package with glass passivated chip. cathode band k a MSA474 Fig.1 Simplified outline (DO-214AC; SOD106) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM PARAMETER repetitive peak reverse voltage BYG80A BYG80B BYG80C BYG80D BYG80F BYG80G BYG80J VR continuous reverse voltage BYG80A BYG80B BYG80C BYG80D BYG80F BYG80G BYG80J IF(AV) average forward current BYG80A to D BYG80F; BYG80G BYG80J IF(AV) average forward current BYG80A to D BYG80F; BYG80G BYG80J Tamb = 60 °C; AL2O3 PCB mounting (see Fig.27); see Figs 5, 6 and 7 averaged over any 20 ms period; see also Figs 17, 18 and 19 Ttp = 100 °C; see Figs 2, 3 and 4 averaged over any 20 ms period; see also Figs 17, 18 and 19 − − − − − − − − − − − − − 50 100 150 200 300 400 600 2.4 2.3 2.0 1.25 1.15...